![In an ON state, the individual Silicon and Germanium diodes, allow a voltage drop of 0.7 V and 0.3 V - Brainly.in In an ON state, the individual Silicon and Germanium diodes, allow a voltage drop of 0.7 V and 0.3 V - Brainly.in](https://hi-static.z-dn.net/files/df3/e6ff22921bf333e35f49e254b24efebb.jpg)
In an ON state, the individual Silicon and Germanium diodes, allow a voltage drop of 0.7 V and 0.3 V - Brainly.in
![SOLVED: Determine the voltage drop across the germanium diode using the piecewise linear model. Data: Vg = 1.9 V, R1 = 85 Ω, Diode VK = 0.2 V, rD = 15 Ω SOLVED: Determine the voltage drop across the germanium diode using the piecewise linear model. Data: Vg = 1.9 V, R1 = 85 Ω, Diode VK = 0.2 V, rD = 15 Ω](https://cdn.numerade.com/ask_images/bfd87bb4d46b49f58b78353c8bf4d51f.jpg)
SOLVED: Determine the voltage drop across the germanium diode using the piecewise linear model. Data: Vg = 1.9 V, R1 = 85 Ω, Diode VK = 0.2 V, rD = 15 Ω
![In an ON state,the individual Silicon and Germanium diodes, allow a voltage drop of 0.7 V and 0.3 V - YouTube In an ON state,the individual Silicon and Germanium diodes, allow a voltage drop of 0.7 V and 0.3 V - YouTube](https://i.ytimg.com/vi/oPYAmq_vgWU/mqdefault.jpg)
In an ON state,the individual Silicon and Germanium diodes, allow a voltage drop of 0.7 V and 0.3 V - YouTube
![Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V 0 changes byB. 0.4 VС. 0.6 VD. 0.8 V Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V 0 changes byB. 0.4 VС. 0.6 VD. 0.8 V](https://search-static.byjusweb.com/question-images/byjus/infinitestudent-images/ckeditor_assets/pictures/727649/original_1.png)
Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V 0 changes byB. 0.4 VС. 0.6 VD. 0.8 V
![1n60 Germanium Diodes with Low Forward Voltage Under 0.3V, 25 pcs: Amazon.com: Industrial & Scientific 1n60 Germanium Diodes with Low Forward Voltage Under 0.3V, 25 pcs: Amazon.com: Industrial & Scientific](https://m.media-amazon.com/images/I/61zX3aNfbAL._AC_UF1000,1000_QL80_.jpg)
1n60 Germanium Diodes with Low Forward Voltage Under 0.3V, 25 pcs: Amazon.com: Industrial & Scientific
In an ON state, the individual Silicon and Germanium diodes, allow a voltage drop of 0.7 V and 0.3 V respectively across them. - Sarthaks eConnect | Largest Online Education Community
![The V-I characteristic of a silicon diode is shown in the figure. Calculate the resistance of the diode (a) ID=15 mA and (b) VD=−10 V. The V-I characteristic of a silicon diode is shown in the figure. Calculate the resistance of the diode (a) ID=15 mA and (b) VD=−10 V.](https://search-static.byjusweb.com/question-images/toppr_ext/questions/828599_f29d7d184b5c41d1b4ed8fb211228d0d.png)
The V-I characteristic of a silicon diode is shown in the figure. Calculate the resistance of the diode (a) ID=15 mA and (b) VD=−10 V.
![In an ON state the individual Silicon and Germanium diodes allow a voltage drop of 07Vand 03V respectively across them In the circuit shown the Si and the Ge diode are connected In an ON state the individual Silicon and Germanium diodes allow a voltage drop of 07Vand 03V respectively across them In the circuit shown the Si and the Ge diode are connected](https://sss.embibe.com/content-grail/production/04a4b444-93be-4be8-b0f2-d6fc2aab61f1.png)